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naprawa wkrętarki RENNER-prośba o pomoc

22 Paź 2016 17:17 531 3
  • Poziom 2  
    Jest tam zabudowany tyrystor lub triak w obowie TO220 3pin.Nie mogę nigdzie znależćjego noty katalogowej.Ponieważ jestem bardzo początkujący to serdecznie proszę o pomoc.
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  • Pomocny post
    Poziom 29  
    DMFP75N075B
    Proszę!
  • Pomocny post

    VIP Zasłużony dla elektroda
    naprawa wkrętarki RENNER-prośba o pomoc naprawa wkrętarki RENNER-prośba o pomoc
    DMFP75N075B
    HEXFET
    Spoiler:
    Dynamic dv/dt Rating
    175°C Operating Temperature
    Fast switching
    Ease of Paralleling
    Simple Drive Requirements

    (R)

    Power MOSFET

    VDSS = 75V
    ID25 = 75A
    RDS(ON) = 11.0 m?

    Description
    Third Generation HEXFETs from International Rectifier provide the designer
    with the best combination of fast switching, ruggedized device design, low
    on-resistance and cost-effectiveness.
    The TO-220 package is universally preferred for all commercial-industrial
    applications at power dissipation levels to approximately 50watts. The low
    thermal resistance and low package cost of the TO-220 contribute to its
    wide acceptance throughout the industry.

    Pin1-Gate
    Pin2-Drain
    Pin3-Source

    Absolute Maximum Ratings
    Parameter

    Max.

    Continuous Drain Current, VGS@10V

    75

    ID@TC=100°C Continuous Drain Current, VGS@10V

    60

    Pulsed Drain Current

    Units

    300

    ID@TC=25°C
    IDM

    (2)

    (1)

    A

    250

    W

    Linear Derating Factor

    1.5

    W/°C

    VGS

    Gate-to-Source Voltage

    ?20

    V

    EAR

    Single Pulse Avalanche Energy

    23

    mJ

    dv/dt

    Peak Diode Recovery dv/dt

    5.9

    V/ns

    TJ
    TSTG

    Operating Junction and
    Storage Temperature Range

    PD@TC=25°C Power Dissipation

    (3)

    (4)

    -55 to +175

    ?°C

    300(1.6mm from case)

    Soldering Temperature, for 10 seconds

    10 Ibf . in(1.1N . m)

    Mounting Torque,6-32 or M3 screw

    Thermal Resistance
    Parameter

    Min.

    Typ.

    Max.

    R?JC

    Junction-to-case

    --

    --

    0.65

    R?CS

    Case-to-Sink, Flat, Greased Surface

    --

    0.50

    --

    R?JA

    Junction-to-Ambient

    --

    --

    Units

    62

    ?°C /W

    1

    DMFP75N075B
    HEXFET

    (R)

    Power MOSFET

    Electrical Characteristics @TJ=25 °C (unless otherwise specified)
    ?
    Parameter

    Min.

    Typ.

    Drain-to-Source Breakdown Voltage

    75

    --

    --

    Breakdown Voltage Temp. Coefficient

    --

    0.074

    --

    RDS(on)

    Static Drain-to-Source On-resistance

    --

    --

    11.0

    VGS(th)

    Gate Threshold Voltage

    2.0

    --

    4.0

    V

    VDS=VGS, ID=250?A

    gfs

    Forward Transconductance

    25

    --

    --

    S

    VDS=25V,ID=40A

    IDSS

    Drain-to-Source Leakage current

    --

    --

    10

    --

    --

    250

    Gate-to-Source Forward leakage

    --

    --

    100

    Gate-to-Source Reverse leakage

    --

    --

    -100

    Qg

    Total Gate Charge

    --

    --

    160

    Qgs

    Gate-to-Source charge

    --

    --

    29

    Qgd

    Gate-to-Drain ( " Miller " ) charge

    --

    --

    55

    td(on)
    tr
    td(off)
    tf

    Turn-on Delay Time

    --

    13

    --

    Rise Time

    --

    64

    --

    Turn-Off Delay Time

    --

    49

    --

    Fall Time

    --

    48

    --

    LD

    Internal Drain Inductance

    --

    4.5

    --

    LS

    Internal Source Inductance

    --

    7.5

    --

    Ciss

    Input Capacitance

    --

    3820

    --

    Coss

    Output Capacitance

    --

    610

    --

    Crss

    Reverse Transfer Capacitance

    --

    130

    --

    V(BR)DSS
    ?V(BR)DSS/
    ?TJ

    IGSS

    Max. Units
    V

    Test Conditions
    VGS=0V,ID=250uA

    V/°C Reference to 25°C,ID=1mA
    m? VGS=10V,ID=40A

    ?A
    nA

    (5)

    (5)

    VDS=75V,VGS=0V
    VDS=60V,VGS=0V,TJ=150°C
    VGS=20V
    VGS=-20V

    ID=40A
    nC VDS=60V
    VGS=10V See Fig.6 and 13(5)

    nS

    VDD=38V
    ID=40A
    RG=2.5?
    VGS=10V See Figure 10(5)

    Between lead,
    6mm(0.25in.)
    nH from package
    and center of
    die contact
    VGS=0V
    pF VDS=25V
    f=1.0MHZ See Figure 5

    Source-Drain Ratings and Characteristics
    Parameter

    Min.

    IS

    Continuous Source Current
    (Body Diode)

    .

    ISM

    Pulsed Source Current
    (Body Diode) (2)

    .

    VSD

    Typ.

    Max.

    --

    --

    Units

    75

    Test Conditions

    A

    MOSFET symbol
    showing the
    integral reverse
    p-n junction diode.

    --

    --

    300

    Diode Forward Voltage

    --

    --

    1.2

    V

    TJ=25°C,IS=40A,VGS=0V

    trr

    Reverse Recovery Time

    --

    100

    150

    nS

    Qrr

    Reverse Recovery Charge

    --

    410

    610

    nC

    TJ=25°C,IF=40A
    di/dt=100A/?s (5)

    ton Forward Turn-on Time
    Notes:

    Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

    Calculated continuous current based on maximum
    allowable junction temperature. Package limitation
    current is 75A.
    (2) Repetitive rating; pulse width limited by max. junction
    temperature. (See fig. 11)

    (1)

    (5)

    (4)

    Starting TJ = 25°C, L = 370mH, RG = 25?, IAS = 40A,
    VGS=10V (See Figure 12)
    ISD <= 40A, di/dt <= 300A/?s, VDD <= V(BR)DSS,TJ <= 175°C

    (5)

    Pulse width <= 400?s; duty cycle <= 2%.